CMOS Nanoelectronics: Innovative Devices, Architectures, and Applications
ISBN/ASIN: 9789814364027,9814364029 | 2013 | English | pdf | xviii, 420/444 pages | 16.7 Mb
Publisher: Pan Stanford | Author: Nadine Collaert
This book covers one of the most important device architectures that have been widely researched to extend the transistor scaling: FinFET. Starting with theory, the book discusses the advantages and the integration challenges of this device architecture. It addresses in detail the topics such as high-density fin patterning, gate stack design, and source/drain engineering, which have been considered challenges for the integration of FinFETs. The book also addresses circuit-related aspects, including the impact of variability on SRAM design, ESD design, and high-T operation. It discusses a new device concept: the junctionless nanowire FET.